Solution-Processed Cu2ZnSn(S,Se)4 Thin-Film Solar Cells Using Elemental Cu, Zn, Sn, S, and Se Powders as Source
نویسندگان
چکیده
منابع مشابه
Solution-Processed Cu2ZnSn(S,Se) 4 Thin-Film Solar Cells Using Elemental Cu, Zn, Sn, S, and Se Powders as Source.
Solution-processed approach for the deposition of Cu2ZnSn (S,Se)4 (CZTSSe) absorbing layer offers a route for fabricating thin film solar cell that is appealing because of simplified and low-cost manufacturing, large-area coverage, and better compatibility with flexible substrates. In this work, we present a simple solution-based approach for simultaneously dissolving the low-cost elemental Cu,...
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A new solution-based method to fabricate Cu(2)ZnSn(S,Se)(4) (CZTSSe) thin films is presented. Binary and ternary chalcogenide nanoparticles were synthesized and used as precursors to form CZTSSe thin films. The composition of the CZTSSe films can be easily controlled by adjusting the ratio of the nanoparticles used. The effect of compositional adjustment on device performance is illustrated. La...
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The Cu(In,Ga)(S,Se)(2)Mo interface in thin-film solar cells has been investigated by surface-sensitive photoelectron spectroscopy, bulk-sensitive x-ray emission spectroscopy, and atomic force microscopy. It is possible to access this deeply buried interface by using a suitable lift-off technique, which allows us to investigate the back side of the absorber layer as well as the front side of the...
متن کاملCZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure
Cu2ZnSnSe4 (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe ...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2015
ISSN: 1931-7573,1556-276X
DOI: 10.1186/s11671-015-1045-6